Presentation details
» Application of layers with internal stress for silicon wafer shaping
Presentation duration: 20 minutes
Presenter: Jan Šik
We review the impact of thin film stress on silicon wafer shaping. Layers with internal stress uniformly shape silicon wafer without deterioration of high quality of the polished front side. Stress in thin film is supposed to be constant regarding to the film thickness, which is valid for most of dielectric thin films used in microelectronics, except of poly silicon. Stress in poly silicon layer is reduced with film thickness due to atoms migration into low energy position. The circular wafer keeps the original axially symmetrical spherical shape after squaring and the solid area can be build from squared segments. Multilayer stack has been designed to decrease the radius of wafer curvature to R ~ 2 m.
Coauthors:- Radomír Lenhard
- David Lysáček
- Michal Lorenc
- Veronika Maršíková
- René Hudec